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| www..com Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 VCES = 1000 V IC25 = 8A VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 120 W Clamped inductive load TC = 25C Maximum Ratings 1000 1000 20 30 8 4 16 ICM = 8 @ 0.8 VCES 40 -55 ... +150 150 -55 ... +150 300 W C C C C Features V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g International High current handling capability MOS Gate turn-on - drive simplicity Applications standard packages JEDEC TO-220AB and TO-263AA Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) I CES IC = 250 mA, VGE = 0 V IC = 100 mA, VCE = VGE VCE= 0.8 VCES VGE = 0 V I GES VCE(sat) VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15V Min. 1000 2.5 TJ = 25C TJ = 125C Characteristic Values Typ. Max. V 5.0 25 250 100 2.2 2.7 V mA mA nA V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode Capacitor power supplies discharge Advantages Easy to mount with one screw Reduces assembly time and cost High power density 98735 (7/00) (c) 2000 IXYS All rights reserved IXGA 4N100 IXGP 4N100 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres IC(ON) Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VGE = 10V, VCE = 10V VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 343 21 5 21 13.6 2.5 6.5 20 25 390 340 0.9 20 25 0.16 700 520 2.0 3.1 800 700 2.0 pF pF pF A nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side Characteristic Values Min. Typ. Max. 2.5 4 S TO-220 AB Dimensions 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Min. Recommended Footprint (Dimensions in inches and mm) Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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